STMICROELECTRONICS

Транзистор A2C50S65M2

Фото уточняется

Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper, IGBT half-bridge x3, NTC thermistor, three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Корпус: ACEPACK™2

Фото справочное.

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Артикул производителя	A2C50S65M2
Производитель	STMICROELECTRONICS
Type of semiconductor module	IGBT
Semiconductor structure	diode/transistor
Topology	boost chopper, IGBT half-bridge x3, NTC thermistor, three-phase diode bridge
Max. off-state voltage	650V
Collector current	50A
Корпус	ACEPACK™2
Application	Inverter, motors
Electrical mounting	Press-in PCB
Gate-emitter voltage	±20V
Pulsed collector current	100A
Power dissipation	208W
Mechanical mounting	screw

Исходное описание поставщика

Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A